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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV26 DESCRIPTION With TO-220C package Low collector saturation voltage Fast switching speed APPLICATIONS For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Absolute maximum ratings (Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Emitter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (peak) Base current Base current (peak) Total power dissipation CONDITIONS NCH I AGN SEM E Open emitter Open base Open collector UTO OND IC VALUE 180 90 7 14 25 4 6 R UNIT V V V A A A A W ae ae TC=25ae 85 150 -65~150 Max.operating junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance junction to mounting base MAX 1.92 UNIT K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. BUV26 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH 90 V VCEsat-1 Collector-emitter saturation voltage IC=6A ;IB=0.6 A 0.6 V VCEsat-2 Collector-emitter saturation voltage IC=12A; IB=1.2A 1.5 V VBEsat-1 Base-emitter saturation voltage IC=6A ;IB=0.6 A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=12A; IB=1.2A 2.0 V ICEX Collector cut-off current VCE =180V;VBE =-1.5V;Tj=125ae 1.0 mA IEBO Switching times resistive load Emitter cut-off current Turn-on time Storage time Fall time VEB=5V; IC=0 1.0 mA ton ts tf INC HAG SEM NE UTO OND IC 0.4 0.45 0.12 R ms |I s 0.6 IC=12A;IB1=1.2A; IB2=2.4A VCC =50V 1.0 0.25 |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV26 HAG INC SEM NE UTO OND IC R Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3 |
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